• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    An optical and / or electronic device comprising a membrane (20) based on suspended germanium, comprising an active zone (21) tensioned by traction arms (23), characterized in that it comprises at least one traction arm (23) comprising non-parallel lateral sides (32), whose width increases away from the active area (21).
    公开号:FR3022684A1
    申请号:FR1455805
    申请日:2014-06-23
    公开日:2015-12-25
    发明作者:Kevin Guilloy；Nicolas Pauc；Vincent Calvo；Vincent Reboud
    申请人:Commissariat a lEnergie Atomique CEA；Commissariat a lEnergie Atomique et aux Energies Alternatives CEA；
    IPC主号:
    专利说明:

    [0001] The invention relates to an optical and / or electronic device comprising a germanium membrane under tension. It also relates to a method of manufacturing such a device. It is known that the application of a constraint in a germanium crystal makes it possible to modify its electronic structure and its physical structure. In particular, its deformation makes it possible to make it semi-conductor with a direct gap and to modify its sensitivity and its optical emission towards the long wavelengths higher than its undeformed direct gap, of 1.55 pm. Applications of these phenomena have been attempted, based on a suspended germanium membrane tensioned by arms. However, the existing methods are limited because they have all or some of the following disadvantages: - They exert too high constraints during the process of manufacturing the germanium membrane, which limits the intensity of the accessible voltage to prevent breakage of the membrane; - They exert inhomogeneous tensions, forming weak points in the membrane, which also limits the intensity of the applicable maximum voltage and induces an inhomogeneous behavior harmful to certain applications.
    [0002] Thus, a general object of the invention is therefore to propose a solution for forming a device comprising germanium under voltage, which does not have all or part of the disadvantages of the existing solutions. For this purpose, the invention is based on an optical and / or electronic device 30 comprising a suspended germanium-based membrane 3022684 2 comprising an active zone tensioned by traction arms, characterized in that it comprises at least a traction arm comprising non-parallel lateral sides, the width of which increases as it moves away from the active zone.
    [0003] The optical and / or electronic device may comprise at least one traction arm whose lateral sides form an obtuse angle with the active zone at the boundary between the traction arm and the active zone.
    [0004] It may comprise at least one trapezoidal traction arm. All the traction arms may have the same shape and be evenly distributed around the active area.
    [0005] The optical and / or electronic device may comprise at least three traction arms. It may comprise a substantially polygonal active zone, in particular forming a regular polygon, the number of sides of which is a multiple of the number of traction arms. It may comprise rounded connections at the periphery of the active zone connecting two traction arms.
    [0006] The optical and / or electronic device may be a diode, a transistor, a luminescent device, a laser, a photodetector, a substrate. The optical and / or electronic device may be an optical device that includes a first mirror under the germanium-based membrane and / or a second mirror above.
    [0007] The invention also relates to a method of manufacturing an optical and / or electronic device, characterized in that it comprises the following steps: etching a germanium-based layer to form at least one arm traction device comprising non-parallel lateral sides, the width of which increases as it moves away from an active zone; etching a sacrificial layer under the germanium-based layer to obtain a suspended germanium-based membrane comprising the active zone and the at least one traction arm. The step of etching the sacrificial layer may extend progressively from the center of the membrane, at the level of the active zone, to the outer edge of the traction arms.
    [0008] The method of manufacturing an optical and / or electronic device may comprise a step of depositing a reflective layer to form a mirror, in particular aluminum, under the membrane and / or a second layer deposition step. reflective to form a mirror on the membrane. These objects, features and advantages of the present invention will be set forth in detail in the following description of a particular embodiment made in a non-limiting manner in relation to the attached figures among which: FIGS. 1a to 1d schematically represent steps of a method of manufacturing a germanium voltage structure according to a first embodiment of the invention.
    [0009] Figures 2a to 2d schematically represent steps of a method of manufacturing a germanium voltage structure according to a second embodiment of the invention.
    [0010] Figures 3a to 3d schematically show a top view of the germanium membranes under voltage of devices according to several variants of the embodiment of the invention. FIG. 4 represents a view from above of a germanium membrane 10 under tension of a device according to one embodiment of the invention. FIGS. 5a and 5b show deformation levels obtained respectively on a membrane according to a first embodiment of the invention and on a membrane outside the invention.
    [0011] FIG. 6 represents deformation levels obtained on a membrane according to another exemplary embodiment of the invention. FIGS. 7a to 7g show different manufacturing steps of a laser incorporating germanium membranes according to one embodiment of the invention. Figure 8 shows the structure of a laser according to one embodiment of the invention.
    [0012] FIG. 1a is a diagrammatic sectional side view of a structure 1 made in the first phase of a method of manufacturing a device according to a first embodiment of the invention. This structure 1 comprises a very thin silicon oxide top layer 2, for example of a few nanometers at 100 nm, which covers a layer 3 made of germanium, with a thickness of the order of 100 nm to a few microns. . It then comprises a layer 4 of silicon oxide having a thickness of the order of 1 μm. The whole is arranged on a silicon substrate.
    [0013] Figure 1b shows the result obtained after a first step of lithographing drawings on the first top layer 2 using for example a negative resin, before etching the silicon oxide for example by argon etching. This results in an upper layer 2 forming a hard mask comprising through openings 2 '. FIG. 1c represents the structure after a step of etching germanium, carried out for example by a technique known by its acronym RIE, for the English terminology of Reactive Ion Etching. This etching step reproduces in the layer 3 of germanium the drawings formed in the upper layer 2, to form 3 'through openings in the germanium layer superimposed on the openings 2' of the upper layer 2.
    [0014] FIG. 1 d represents the final structure obtained after an etching of the silicon oxide layer 4 disposed under germanium, for example by HF etching in the vapor or liquid phase until the membrane is released, that is to say that is, the etching is stopped when it reaches laterally the base of the pulling arms. This results in a germanium membrane 20 suspended above a cavity 44 formed in the silicon oxide layer 4, above the silicon substrate 5. The silicon oxide layer 4 thus serves here as a sacrificial layer, and following its removal by etching, the germanium membrane 30 is automatically tensioned by the intrinsic properties of the resulting structure. Figure 2a shows a schematic side sectional view of a structure 11 made in a first phase of a method of manufacturing a device according to a second embodiment of the invention. This structure 11 likewise comprises an upper layer 12 of silicon oxide, which covers a layer 13 of Germanium, itself directly epitaxial on a silicon substrate 15.
    [0015] FIG. 2b shows the result obtained after a first step similar to the step described in the first embodiment, of lithographing drawings on the first upper etching layer 12 of the silicon oxide to form an upper layer 12 15 comprising through apertures 12 'to form a mask for the next germanium etching step. FIG. 2c thus represents the resulting structure after this etching step of the germanium, which reproduces in the germanium layer 13 the drawings of the upper layer 12, forming apertures 13 'passing through the germanium layer, superimposed on the openings 12 FIG. 2d shows the final structure obtained after an etching of the silicon layer 15 to form a cavity 44 disposed under the germanium, for example by wet etching with tetramethylammonium hydroxide (TMAH), which selectively etches silicon with respect to germanium to a depth sufficient to release the membrane. In this second embodiment, the silicon layer 15 thus fulfills the sacrificial layer function. This results in a suspended germanium membrane. As can be seen from the above descriptions of the two embodiments, the methods used are advantageously similar and compatible with the CMOS processes used for the manufacture of silicon-based electronic components. According to the embodiment of the invention, the etchings made in the preceding steps of the manufacturing processes, forming openings 2 ', 3', 12 ', 13' to finally obtain a suspended germanium membrane 20, have a shape particular advantageous. Figures 3a to 3d show exemplary embodiments of germanium membranes 20 according to different embodiments of the invention. These figures show indeed in views from above structures as shown in sectional side by Figures 1d and 2d. Each membrane 20 is broken down into a central part, called the active zone 21 or zone of interest, where the voltage is concentrated, which makes it possible to provide the active zone 21 with interesting optical, electronic and structural properties, under the effect of traction 23, connecting the active area 21 to the rest of the structure. According to an advantageous embodiment, the active zone 21 is in the form of a regular polygon, rotationally symmetrical. In the embodiments of FIGS. 3a to 3d, this polygon comprises respectively 4 (particular case of the square), 6, 8 and 12 sides. As an alternative embodiment, this polygon could be irregular, while keeping a symmetry of rotation, for example of rectangle shape, truncated rectangle, ...
    [0016] According to an advantageous embodiment, the traction arms 23 are connected to one side 24 on two 24, 22 of the polygon forming the active zone 21. In a variant, any combination of a number of associated traction arms 23 to an active area comprising a number of multiple sides of the number of pulling arms could be envisaged, by distributing the pulling arms evenly and symmetrically about the active area. Moreover, as more particularly shown in FIGS. 3a and 6, but also verified in the examples of FIGS. 3b to 3d, the traction arms 23 advantageously have trapezoidal shapes, comprising on the one hand a small side 24 at the border with the active zone 21, by definition parallel to one side of the active zone 21, and a longer side 34 opposite, parallel to the short side 24, connected by two lateral sides 32. Each traction arm 23 advantageously comprises a shape whose width increases as it moves away from the active zone 21. Each lateral side 32 of a traction arm 23 forms an obtuse angle α with the side 24 of the active zone 21 with which it is connected, thus greater than 90 degrees. The lateral side 32 is beyond the perpendicular P 20 to the side 24 of the active zone 21, giving a flared shape to the traction arm 23. The two lateral sides 32 of a traction arm 23 are not parallel between them. They preferably move away symmetrically with respect to the side 24 of the active zone 21, to exert homogeneous stresses on the active zone 21.
    [0017] The geometric choices explained above make it possible to achieve the following advantages: the deformations of the germanium membrane at the border 24 between the active zone 21 and the traction arms 23 are improved, can be increased without risk of breaking The germanium structure, in particular because of the obtuse angles present in the angles at these boundaries, which provide a great resistance; - The fact of using traction arms 23 having a width 5 which increases away from the active area, including a flared shape, for example trapezoidal, combines the advantage of being able to exert a significant force on the area active while using a large number of traction arms, preferably greater than or equal to three, without risk of overlap between these arms at the active area which is small; On the other hand, the fact of choosing a width of the traction arms corresponding to the length of the sides 24 of the active zone makes it possible to multiply the number of traction arms linked to the active zone, in particular to use at least three; - The fact of using traction arms 23 having a width which increases away from the active zone also allows a step of etching germanium without exerting too much force on the traction arms 23. For this Such a step will advantageously start with the etching of the sacrificial layer at the level of the active zone, to progressively release the set of traction arms away from the active zone, with a progressive tensioning.
    [0018] Naturally, the geometries represented by FIGS. 3a to 3d are intentionally schematic and perfect. In reality, the forms obtained will be less regular, less perfect, but will approach these forms. By way of example, FIG. 4 shows the shape obtained according to a real example of manufacturing a membrane 20 with two traction arms 23, approaching the shape of FIG. 3a. FIGS. 5a and 5b show deformation levels obtained using a calculator on a membrane according to one embodiment of the invention and a membrane of the same dimensions outside the invention respectively. In both simulations, the active zone 21 has a width of 1 μm for a length of 8 μm, and the traction arms 23 have a length of 28 μm. It appears that with two trapezoidal arms according to the embodiment of the invention, represented by FIG. 5a, the deformations (and thus the stresses) obtained within the membrane have a good uniformity, more precisely a ratio between the maximum deformation observed in the corners of the active zone at the border 24 with the traction arms 23 and the center deformation 26 of the order of 1.45. In the comparative example simulated with two rectangular pulling arms, shown in FIG. 5b, the same ratio is 2.57. As a result, it is possible to apply much greater maximum deformation with the embodiment shown in FIG. 5a before rupture of the germanium membrane. FIG. 6 also illustrates the uniformity of the distribution of the deformations within a membrane with three traction arms 23, of trapezoidal shape, in an embodiment close to the geometry of FIG. 3b. Note, in this embodiment, it also appears that it is advantageous to form curved sides 22 'of the active zone 21, between two traction arms 23, replacing the sides 22 of the regular polygon. Thus, in this embodiment, the periphery of the active zone 21 comprises rounded connections between the adjacent traction arms 23, forming a concave active zone 21. This approach makes it possible to eliminate the angles, which further reduces the areas of high stress. Thus, by polygonal shape of the active zone 21 of the membrane 20 according to the invention, we also mean a shape with curved sides 22 '. With an embodiment according to FIG. 6, a 1.9% deformation of the membrane is applied, while maintaining a deformation ratio of only 1.13, which demonstrates a great uniformity of stress distribution within the active area. Embodiments have been previously illustrated by way of non-limiting examples. Naturally, other forms of membranes may be chosen while remaining within the scope of the invention. In particular, not all the traction arms may be identical, although it is advantageous to use arms of the same shape, uniformly distributed around the active zone, to find the most homogeneous geometry possible. It is generally also preferable to use at least three traction arms. Finally, the invention is implemented when at least one traction arm 23 has a width which increases away from the active zone, at least over part of its length. In addition, traction arms connected to an active zone have been shown at a width corresponding to a side 24 of a polygon of the active zone. Naturally, the active zone may have other shapes and the connection between a traction arm 23 and the active zone 21 may differ from the width of one side 24 of a polygon. Finally, even if the invention advantageously makes it possible to produce membranes made entirely of germanium, it is naturally possible to implement the invention from a germanium-based alloy, such as SiGe, SiGeSn, or layer stackings. different materials based on germanium.
    [0019] Such a germanium membrane according to the invention allows the realization of several types of optical and / or electronic devices. As examples, we can mention a diode, a transistor, a luminescent device such as a laser, a photodetector.
    [0020] In these examples, the stressed material is the active material for the intended application. But this stressed material can also be used as a new substrate material for growth of another material which will then be the active material for the intended application. Indeed, it is well known that the quality of the crystalline growth of a thin-film material on a substrate is highly dependent on the difference between the mesh parameters of the substrate and the layer: these two parameters must be as close as possible to avoid growth defects. Usually, this problem is solved for example by depositing a buffer intermediate layer before the growth of the active material to adapt the mesh parameters but this imposes additional steps during manufacture. Thanks to the invention, it is then possible to produce a substrate on demand, the mesh parameter of which will be adjusted to that of the active material: it suffices to apply the constraints necessary to stretch the crystalline structure of the substrate until a mesh as close as possible to that of the growth material, then to achieve growth. These variations can be significant up to a few percent.
    [0021] FIGS. 7a to 7g show various steps of a method of manufacturing a laser incorporating germanium membranes according to an embodiment of the invention, more specifically a surface-emitting vertical cavity laser (VCSEL).
    [0022] The first manufacturing steps, represented by FIGS. 7a to 7d, correspond to the steps described previously with reference to FIGS. 1a-1d to obtain a germanium membrane. In this embodiment, the shape of the membranes 20 is chosen to achieve a sufficient deformation in the active zone greater than 1.6%, to obtain the laser effect using germanium. For this, the shape of the membrane 20 according to Figures 3b and 6 is suitable for example. The process then comprises a further step of deposition of aluminum on the germanium membrane as shown in FIG. 7e. An additional step removes the aluminum above and on the sides of the membrane 20, leaving only the aluminum layer under the membrane, as shown in FIG. 7f. For this, an argon beam etching 15 may be implemented, having taken care to have a layer of alumina 42 under the aluminum to form a stop layer during this etching. The aluminum thus forms a first mirror 41. Finally, the top of the structure is covered with a second conventional mirror 43, for example a dielectric mirror, in particular a Bragg mirror. For this, an evaporator deposition of weak layers and high indices can be implemented, to obtain the membrane 20 illustrated in Figure 7g, comprising two lower and upper mirrors. These layers are designed so as to induce little stress and do not affect the deformation of the membrane 20 in the active zone. FIG. 8 illustrates the sectional structure of the laser obtained, comprising a cavity 44 comprising the two types of mirrors 41, 43.
    [0023] Other laser configurations can be implemented by interleaving layers between the membrane and the mirror to improve efficiency. Similarly, the cavity can be made in the substrate 15. Finally, to produce a horizontal laser (in which the light propagates in the plane of the membrane), the membrane (active zone and / or arm) can be structured to dimensions between λ / 10 and 10λ to form a photonic crystal. 10 15
    权利要求:
    Claims (12)
    [0001]
    REVENDICATIONS1. An optical and / or electronic device comprising a membrane (20) based on suspended germanium, comprising an active zone (21) tensioned by traction arms (23), characterized in that it comprises at least one traction arm (23) comprising non-parallel lateral sides (32), whose width increases away from the active area (21).
    [0002]
    2. Optical and / or electronic device according to the preceding claim, characterized in that it comprises at least one traction arm (23) whose lateral sides (32) form an obtuse angle with the active zone (21) at the level of the boundary between the traction arm (23) and the active zone (21).
    [0003]
    3. optical device and / or electronic according to one of the preceding claims, characterized in that it comprises at least one traction arm (23) of trapezoidal shape.
    [0004]
    4. Optical and / or electronic device according to one of the preceding claims, characterized in that all the traction arms (23) have the same shape and are evenly distributed around the active area (21).
    [0005]
    5. Optical and / or electronic device according to one of the preceding claims, characterized in that it comprises at least three traction arms (23).
    [0006]
    6. An optical and / or electronic device according to one of the preceding claims, characterized in that it comprises a substantially polygonal active zone (21), in particular forming a regular polygon, the number of sides of which (22, 24) being 3022684 is a multiple of the number of traction arms (23).
    [0007]
    7. An optical and / or electronic device according to one of the preceding claims, characterized in that it comprises links (22 ') rounded at the periphery of the active zone (21) connecting two traction arms (23). ).
    [0008]
    8. Optical and / or electronic device according to one of the preceding claims, characterized in that it is a diode, a transistor, a luminescent device, a laser, a photodetector, a substrate.
    [0009]
    9. An optical and / or electronic device according to the preceding claim, characterized in that it is an optical device and in that it comprises a first mirror (41) under the membrane (20) based on germanium and / or a second mirror (43) above.
    [0010]
    10. A method of manufacturing an optical and / or electronic device, characterized in that it comprises the following steps: etching a layer (3; 13) based on germanium to form at least one traction arm (23) comprising non-parallel lateral sides (32), the width of which increases as it moves away from an active area (21); etching a sacrificial layer (4; 15) under the germanium-based layer (3; 13) to obtain a suspended germanium-based membrane (20) comprising the active area (21) and the at least one arm traction (23).
    [0011]
    11. A method of manufacturing an optical and / or electronic device according to the preceding claim, characterized in that the step of etching the sacrificial layer progressively extends from the center of the membrane (20), at the level of the active zone (21) to the outer edge of the traction arms (23). 5
    [0012]
    12. A method of manufacturing an optical and / or electronic device according to claim 10 or 11, characterized in that it comprises a step of depositing a reflective layer to form a mirror (41), in particular aluminum, under the membrane (20) and / or a second step of depositing a reflective layer to form a mirror on the membrane. 10
    类似技术:
    公开号 | 公开日 | 专利标题
    EP2960203B1|2019-11-06|Germanium-based membrane device under stress
    EP2973750B1|2017-03-01|Process for forming light-emitting diodes
    EP3151265B1|2018-02-28|Method for producing a semiconductor structure comprising a stressed portion
    EP2144369A1|2010-01-13|Bulk acoustic wave resonator
    FR2896913A1|2007-08-03|PROCESS FOR PRODUCING A QUASI-SUBSTRATE WAFER AND SEMICONDUCTOR BODY PRODUCED BY USING A QUASI-SUBSTRATE WAFER OF THIS TYPE
    EP3151266B1|2017-11-22|Method for forming a semiconductor portion by epitaxial growth on a stressed portion
    EP2146228A1|2010-01-20|Liquid crystal alignment layer deposited and rubbed before creating microstructures
    FR2933502A1|2010-01-08|OPTICAL WAVEGUIDE STRUCTURE MICRONANOSTRUCTURE FOR THE CONTROL OF BIREFRINGENCE
    EP3348518A1|2018-07-18|Collimated light source, method for manufacturing same and use thereof for single photon emission
    EP2191306B1|2015-07-29|Dispersive optical device with three dimensional photonic crystal
    EP3728109B1|2021-10-13|Process for producing semiconductor devices and dicing lanes
    EP2697825B1|2017-07-19|Method for manufacturing an opto-microelectronic device
    EP3438041B1|2020-05-13|Semiconductor structure comprising a suspended membrane with a thickness-structured central portion
    EP3384521A1|2018-10-10|Method for obtaining a semi-polar nitride layer on a crystalline substrate
    EP2383775B1|2017-03-15|Verfahren zum Erhalten einer AlN-Schicht mit deutlich vertikalen Flanken
    EP3158112B1|2019-03-06|Method for forming a diamond monocrystalfrom a diamond monocrystalline substrate
    EP2232314B1|2013-03-20|Method for obtaining a structured material with through openings, in particular nitrides of type iii semiconductors structured according to photonic crystal patterns
    EP3764409A1|2021-01-13|Single photon emission source with high indiscernibility factor
    EP3798696A1|2021-03-31|Diffusive structure for light source
    EP3629385B1|2021-03-24|Optoelectronic infrared-emitting device comprising an active layer based on germanium-tin and method for manufacturing the same
    WO2022043053A1|2022-03-03|Method for manufacturing an optoelectronic device
    FR3107998A1|2021-09-10|method of manufacturing a photonic chip comprising at least one hybrid laser source
    CH713854B1|2021-08-16|Manufacturing process of a micromechanical part.
    FR3109016A1|2021-10-08|DISMOUNTABLE STRUCTURE AND TRANSFER PROCESS OF A LAYER IMPLEMENTING THE SAID DISMOUNTABLE STRUCTURE
    FR3083002A1|2019-12-27|OPTOELECTRONIC DEVICE COMPRISING AN ARRAY OF DIODES
    同族专利:
    公开号 | 公开日
    EP2960203B1|2019-11-06|
    JP2016021565A|2016-02-04|
    FR3022684B1|2017-10-27|
    JP6664892B2|2020-03-13|
    US9502864B2|2016-11-22|
    EP2960203A1|2015-12-30|
    US20150372454A1|2015-12-24|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    GB2501307A|2012-04-19|2013-10-23|Univ Warwick|Suspended Ge or Si-Ge semiconductor structure on mono-crystal line Si substrate|
    JP2617287B2|1995-09-06|1997-06-04|シャープ株式会社|Silicon micro sensor|
    CN104718673B|2012-07-27|2017-11-14|统雷有限公司|Tunable short cavity laser sensor|
    KR101946035B1|2012-09-18|2019-04-25|한국전자통신연구원|Vertical-Cavity Surface Emitting Laser and manufacturing method for the same|CN107211222B|2015-01-26|2020-03-24|思睿逻辑国际半导体有限公司|MEMS transducer|
    KR102181323B1|2016-04-06|2020-11-23|한국전자통신연구원|Laser device and methods for manufacturing the same|
    FR3055467B1|2016-08-26|2018-09-21|Commissariat A L'energie Atomique Et Aux Energies Alternatives|METHOD FOR PRODUCING A TENSION-CONTAINING LAYER BASED ON GERMANIUM TIN|
    FR3069859B1|2017-08-03|2019-08-23|Commissariat A L'energie Atomique Et Aux Energies Alternatives|SEMICONDUCTOR STRUCTURE COMPRISING A SUSPENDED MEMBRANE WITH A CENTRAL PORTION STRUCTURED IN THICKNESS|
    FR3095893A1|2019-05-09|2020-11-13|Commissariat A L'energie Atomique Et Aux Energies Alternatives|optoelectronic device comprising a central portion tensioned along a first axis and electrically polarized along a second axis|
    JPWO2020245866A1|2019-06-03|2020-12-10|
    法律状态:
    2015-06-30| PLFP| Fee payment|Year of fee payment: 2 |
    2015-12-25| PLSC| Search report ready|Effective date: 20151225 |
    2016-07-08| PLFP| Fee payment|Year of fee payment: 3 |
    2017-06-30| PLFP| Fee payment|Year of fee payment: 4 |
    2018-06-27| PLFP| Fee payment|Year of fee payment: 5 |
    2019-07-01| PLFP| Fee payment|Year of fee payment: 6 |
    2020-06-30| PLFP| Fee payment|Year of fee payment: 7 |
    优先权:
    申请号 | 申请日 | 专利标题
    FR1455805A|FR3022684B1|2014-06-23|2014-06-23|CONTRAINED GERMANIUM MEMBRANE DEVICE|FR1455805A| FR3022684B1|2014-06-23|2014-06-23|CONTRAINED GERMANIUM MEMBRANE DEVICE|
    EP15171976.2A| EP2960203B1|2014-06-23|2015-06-12|Germanium-based membrane device under stress|
    US14/742,971| US9502864B2|2014-06-23|2015-06-18|Device comprising a strained germanium membrane|
    JP2015124423A| JP6664892B2|2014-06-23|2015-06-22|Devices containing strained germanium films|
    [返回顶部]